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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3450 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage ww w scs .i 800 V 500 V 7 V 10 A 20 A 3 A UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 90 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 1mA; IE= 0 IC= 5mA; RBE= IE= 1m A; IC= 0 IC= 4A; IB= 0.8A B 2SC3450 MIN 800 500 7 TYP. MAX UNIT V V V 1.0 1.5 V V A A IC= 4A; IB= 0.8A B VCB= 500V; IE= 0 Current-Gain--Bandwidth Product Output Capacitance w w w. sem isc VEB= 5V; IC= 0 IC= 0.8A; VCE= 5V IC= 4A; VCE= 5V IC= 0.8A; VCE= 10V IC= 5A, IB1= 1A; IB2= -2A RL= 40; VCC= 200V .cn i 15 8 18 120 10 10 50 MHz pF IE= 0; VCB= 10V; ftest= 1.0MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time 0.5 3.0 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Websitewww.iscsemi.cn 2 |
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